Document Details

Document Type : Article In Journal 
Document Title :
Record Mobility in Transparent p‑Type Tin Monoxide Films and Devices by Phase Engineering
رقم قياسي لحركية ترانستور أغشية SnO الرقيقة الشفافة من النوع الموجب
 
Subject : Nano materials 
Document Language : English 
Abstract : Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 _C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V_1 s_1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V_1 s_1 and 5.87 cm2 V_1 s_1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide 
ISSN : 101021 
Journal Name : ACS Nano 
Volume : 7 
Issue Number : 6 
Publishing Year : 1434 AH
2013 AD 
Article Type : Article 
Added Date : Friday, September 6, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
هيسيس ألفونسو كارافيوCaraveo, Jesus AlfonsoInvestigatorDoctoratealfonso.Caraveo@kaust.edu.sa
براديبتا ك نياكNayak, Pradipta K.ResearcherDoctoratepardipta.nayak@kaust.edu.sa

Files

File NameTypeDescription
 35949.pdf pdf 

Back To Researches Page